Optical Multilevel Spin Bit Device Using Chiral Quantum Dots-Reference-Cited by-同舟云学术

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Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

Published:2020-11-13 Issue:12 Volume:20 Page:8675-8681
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Al-Bustami H.¹^ORCID,Bloom B. P.²^ORCID,Ziv Amir¹^ORCID,Goldring S.¹,Yochelis S.¹,Naaman R.³^ORCID,Waldeck D. H.²^ORCID,Paltiel Y.¹^ORCID

Affiliation:

1. Applied Physics Department and the Center for Nano-Science and Nano-Technology, The Hebrew University of Jerusalem, Jerusalem 91904 Israel

2. Chemistry Department, University of Pittsburgh, Pittsburgh Pennsylvania 15260 United States

3. Department of Chemical and Biological Physics, Weizmann Institute, Rehovot 76100 Israel

Funder

U.S. Department of Energy

Ministry of Science Israel

Neubauer Ph.D. Fellowship

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c03445

Reference43 articles.

1. Yiming, Huai Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects; AAPPS Bulletin, 2008; Vol. 18, p 8.

2. Device implications of spin-transfer torques

3. Spintronics based random access memory: a review

4. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

5. Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

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