Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires-Reference-Cited by-同舟云学术

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Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires

Published:2020-04-02 Issue:5 Volume:20 Page:3344-3351
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Isik Goktas Nebile¹,Sokolovskii Andrei²,Dubrovskii Vladimir G.³^ORCID,LaPierre Ray R.¹^ORCID

Affiliation:

1. Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

2. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

3. St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia

Funder

Russian Science Foundation

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00240

Reference47 articles.

1. Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

2. Effect of twin boundaries and structural polytypes on electron transport in GaAs

3. Effects of twins on the electronic properties of GaAs

4. Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures

5. Electron Trapping in InP Nanowire FETs with Stacking Faults

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3. Tellurium Doping in MnS Inclusions and Corresponding Modification Effect: Experimental and First-Principles Study;Metallurgical and Materials Transactions A;2023-09-12

4. Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices;Nanotechnology;2023-07-06

5. Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions;Crystal Growth & Design;2023-06-09

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