Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors
Author:
Affiliation:
1. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
2. National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
Funder
National Research Foundation of Korea
Core Research for Evolutional Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c01115
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