Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress-Reference-Cited by-同舟云学术

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Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress

Published:2019-02-05 Issue:3 Volume:19 Page:1460-1466
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Noyce Steven G.¹^ORCID,Doherty James L.¹,Cheng Zhihui¹,Han Hui²,Bowen Shane²,Franklin Aaron D.¹³^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States

2. Illumina Inc., 5200 Illumina Way, San Diego, California 92122, United States

3. Department of Chemistry, Duke University, Durham, North Carolina 27708, United States

Funder

Illumina, Inc.

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b03986

Reference51 articles.

1. Room-temperature transistor based on a single carbon nanotube

2. Carbon nanotube based biosensors

3. Single- and multi-wall carbon nanotube field-effect transistors

4. Carbon Nanotube Gas and Vapor Sensors

5. Sensing Mechanisms for Carbon Nanotube Based NH3 Gas Detection

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4. Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics;Journal of Applied Physics;2023-12-18

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