Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2-Reference-Cited by-同舟云学术

Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2

Published:2019-02-05 Issue:3 Volume:19 Page:1736-1742
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lin Jiangxiazi¹^ORCID,Han Tianyi¹,Piot Benjamin A.²,Wu Zefei¹,Xu Shuigang¹,Long Gen¹^ORCID,An Liheng¹,Cheung Patrick³,Zheng Peng-Peng³,Plochocka Paulina⁴^ORCID,Dai Xi¹,Maude Duncan K.⁴,Zhang Fan³,Wang Ning¹^ORCID

Affiliation:

1. Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

2. Laboratoire National des Champs Magnétiques Intenses, LNCMI-CNRS-UGA-UPS-INSA-EMFL, F-38042 Grenoble, France

3. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States

4. Laboratoire National des Champs Magnétiques Intenses, LNCMI-CNRS-UGA-UPS-INSA-EMFL, F-31400 Toulouse, France

Funder

Research Grants Council, University Grants Committee

University of Manchester

Army Research Office

Hong Kong University of Science and Technology

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04731

Reference42 articles.

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5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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