Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect-Reference-Cited by-同舟云学术

Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect

Published:2018-04-27 Issue:5 Volume:18 Page:3235-3240
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yamada Keiko¹,Souma Seigo²³,Yamauchi Kunihiko⁴,Shimamura Natsumi¹,Sugawara Katsuaki²³,Trang Chi Xuan¹,Oguchi Tamio⁴,Ueno Keiji⁵,Takahashi Takashi¹²³,Sato Takafumi¹²^ORCID

Affiliation:

1. Department of Physics, Tohoku University, Sendai 980-8578, Japan

2. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

3. WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

4. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

5. Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01003

Reference42 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. Topological Insulator Materials

4. Electronic analog of the electro‐optic modulator

5. Fermi Surface of Bi(111) Measured by Photoemission Spectroscopy

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