Monolithic Axial and Radial Metal–Semiconductor Nanowire Heterostructures-Reference-Cited by-同舟云学术

Monolithic Axial and Radial Metal–Semiconductor Nanowire Heterostructures

Published:2018-11-14 Issue:12 Volume:18 Page:7692-7697
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Sistani M.¹^ORCID,Luong M. A.²,den Hertog M. I.³^ORCID,Robin E.²,Spies M.³,Fernandez B.³,Yao J.⁴^ORCID,Bertagnolli E.¹,Lugstein A.¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna 1040, Austria

2. Université Grenoble Alpes, CEA, INAC, MEM, Grenoble F-38000, France

3. Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, 25 Avenue des Martyrs, Grenoble 38042, France

4. Department of Electrical and Computer Engineering, Institute for Applied Life Sciences, University of Massachusetts, Amherst, Massachusetts 01003, United States

Funder

Agence Nationale de la Recherche

Campus France

Austrian Science Fund

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b03366

Reference41 articles.

1. Semiconductor nanowire heterostructures

2. Quantum Confinement and Electronic Properties of Silicon Nanowires

3. Indirect to direct band gap transition in ultra-thin silicon films

4. Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique

5. Three-dimensional electrostatic effects of carbon nanotube transistors

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