One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure-Reference-Cited by-同舟云学术

One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure

Published:2018-07-12 Issue:8 Volume:18 Page:4885-4890
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Hyun Ho¹²^ORCID,Yang Bowen¹³,Patel Tarun¹³,Sfigakis Francois¹²,Li Chenghe⁴,Tian Shangjie⁴,Lei Hechang⁴,Tsen Adam W.¹²^ORCID

Affiliation:

1. Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

2. Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

3. Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

4. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, China

Funder

Government of Canada

Ministry of Science and Technology of the People's Republic of China

National Research Foundation of Korea

National Natural Science Foundation of China

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01552

Reference42 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe2

3. Characterization of collective ground states in single-layer NbSe2

4. Zone-center phonons of bulk, few-layer, and monolayer1T−TaS2: Detection of commensurate charge density wave phase through Raman scattering

5. Distinct surface and bulk charge density waves in ultrathin 1T−TaS2

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