Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing-Reference-Cited by-同舟云学术

Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Published:2018-12-07 Issue:1 Volume:19 Page:362-368
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Alanis Juan Arturo,Lysevych Mykhaylo,Burgess Tim,Saxena Dhruv¹,Mokkapati Sudha²,Skalsky Stefan,Tang Xiaoyan,Mitchell Peter,Walton Alex S.^ORCID,Tan Hark Hoe,Jagadish Chennupati,Parkinson Patrick^ORCID

Affiliation:

1. The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom

2. School of Physics and Astronomy and the Institute for Compound Semiconductors, Cardiff University, Cardiff, CF10 3AT, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Royal Society

Australian Research Council

Consejo Nacional de Ciencia y Tecnolog?a

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04048

Reference64 articles.

1. Nanoribbon Waveguides for Subwavelength Photonics Integration

2. Multiplexed and Electrically Modulated Plasmon Laser Circuit

3. Deep learning with coherent nanophotonic circuits

4. Engineering the Photoresponse of InAs Nanowires

5. An Ultrafast Switchable Terahertz Polarization Modulator Based on III–V Semiconductor Nanowires

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