Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures-Reference-Cited by-同舟云学术

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures

Published:2019-01-04 Issue:2 Volume:19 Page:1074-1082
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Safeer C. K.¹,Ingla-Aynés Josep¹,Herling Franz¹,Garcia José H.²^ORCID,Vila Marc²³,Ontoso Nerea¹,Calvo M. Reyes¹⁴,Roche Stephan²⁵^ORCID,Hueso Luis E.¹⁴^ORCID,Casanova Fèlix¹⁴^ORCID

Affiliation:

1. CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain

2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, 08193 Bellaterra, Catalonia, Spain

3. Department of Physics, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Catalonia, Spain

4. IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain

5. ICREA − Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Catalonia, Spain

Funder

Ministerio de Economía y Competitividad

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04368

Reference82 articles.

1. Electronic spin transport and spin precession in single graphene layers at room temperature

2. Tunneling Spin Injection into Single Layer Graphene

3. Highly efficient spin transport in epitaxial graphene on SiC

4. Graphene spintronics

5. Long distance spin communication in chemical vapour deposited graphene

Cited by 204 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Twist-angle-tunable spin texture in WSe2/graphene van der Waals heterostructures;Nature Materials;2024-08-27

2. Spintronics with two-dimensional materials and van der Waals heterostructures;2D Materials;2024-07-29

3. Intrinsic Ohmic Contacts and Polarity‐Tunable Schottky Barriers in M₈X₁₂–Graphene (M = Mo, W; X = S, Se) van der Waals Heterostructures for High‐Performance and Bipolar Device Applications;physica status solidi (b);2024-07-27

4. Swapping exchange and spin-orbit induced correlated phases in proximitized Bernal bilayer graphene;Physical Review B;2024-07-15

5. Sliding Ferroelectricity Engineered Coupling between Spin Hall Effect and Layertronics in 2D Lattice;The Journal of Physical Chemistry Letters;2024-06-20