In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)
Author:
Affiliation:
1. CEMES CNRS-UPR 8011, Université de Toulouse, 31055 Toulouse, France
2. INSP CNRS-UMR 7588, Sorbonne Universités-UPMC 75252 Paris, France
3. LISV, Université Versailles St-Quentin, 78140 Vélizy, France
Funder
Agence Nationale de la Recherche
European Regional Development Fund
Conseil Regional Midi-Pyr?n?es
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b00144
Reference39 articles.
1. Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
2. Spectroscopic Measurement of Spin-dependent Resonant Tunneling through a 3D Disorder: The Case ofMnAs/GaAs/MnAsJunctions
3. Magnetologic withα−MnAsThin Films
4. The As−Mn (Arsenic-Manganese) system
5. Interplay of stress and magnetic properties in epitaxial MnAs films
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1. Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001);Journal of Physics D: Applied Physics;2020-05-05
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4. Inhomogeneous spatial distribution of the magnetic transition in an iron-rhodium thin film;Nature Communications;2017-06-07
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