Chemical Gating of a Weak Topological Insulator: Bi14Rh3I9-Reference-Cited by-同舟云学术

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Chemical Gating of a Weak Topological Insulator: Bi14Rh3I9

Published:2017-10-02 Issue:10 Volume:17 Page:6303-6308
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ghimire Madhav Prasad¹²^ORCID,Richter Manuel¹³

Affiliation:

1. Leibniz Institute for Solid State and Materials Research, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

2. Condensed Matter Physics Research Center (CMPRC), Butwal-11, Rupandehi, Nepal

3. Dresden Center for Computational Materials Science (DCMS), TU Dresden, D-01062 Dresden, Germany

Funder

Alexander von Humboldt-Stiftung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b03001

Reference30 articles.

1. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit

2. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

3. Colloquium: Topological insulators

4. Topological Insulators in Three Dimensions

5. Topological invariants of time-reversal-invariant band structures

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1. Rhodium-based half-Heusler alloys as thermoelectric materials;Physical Chemistry Chemical Physics;2022

2. The Weak 3D Topological Insulator Bi 12 Rh 3 Sn 3 I 9;Chemistry – A European Journal;2020-10-04

3. Strong and Weak 3D Topological Insulators Probed by Surface Science Methods;physica status solidi (b);2020-05-12

4. Crystal Chemistry and Bonding Patterns of Bismuth-Based Topological Insulators;Inorganic Chemistry;2020-02-26

5. Quantum anomalous Hall effect and Anderson-Chern insulating regime in the noncollinear antiferromagnetic 3Q state;Physical Review B;2019-10-28

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