Measuring the Edge Recombination Velocity of Monolayer Semiconductors-Reference-Cited by-同舟云学术

Measuring the Edge Recombination Velocity of Monolayer Semiconductors

Published:2017-08-18 Issue:9 Volume:17 Page:5356-5360
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhao Peida¹,Amani Matin¹,Lien Der-Hsien¹^ORCID,Ahn Geun Ho¹,Kiriya Daisuke¹,Mastandrea James P.¹,Ager Joel W.¹^ORCID,Yablonovitch Eli¹,Chrzan Daryl C.¹,Javey Ali¹^ORCID

Affiliation:

1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b01770

Reference27 articles.

1. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

2. Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide

3. Single-layer MoS2 transistors

4. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

5. Electroluminescence in Single Layer MoS2

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