Electrostatically Induced Quantum Point Contacts in Bilayer Graphene
Author:
Affiliation:
1. Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland
2. National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom
3. National Institute for Material Science,1-1 Namiki, Tsukuba 305-0044, Japan
Funder
European Commission
Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b04666
Reference31 articles.
1. Transport in gapped bilayer graphene: The role of potential fluctuations
2. Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry
3. Edge currents shunt the insulating bulk in gapped graphene
4. The importance of edges in reactive ion etched graphene nanodevices
5. Characterizing wave functions in graphene nanodevices: Electronic transport through ultrashort graphene constrictions on a boron nitride substrate
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