Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5−7, 10117 Berlin, Germany
2. Laboratório de Filmes Semicondutores, Universidade Estadual Paulista Bauru, 17033-360 São Paulo, Brazil
Funder
Leibniz-Gemeinschaft
Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung
Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b01196
Reference73 articles.
1. The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes
2. InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact
3. Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy
4. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes
5. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers
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