Direct Observation of the Band Gap Transition in Atomically Thin ReS2-Reference-Cited by-同舟云学术

Direct Observation of the Band Gap Transition in Atomically Thin ReS2

Published:2017-08-09 Issue:9 Volume:17 Page:5187-5192
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gehlmann Mathias¹^ORCID,Aguilera Irene²,Bihlmayer Gustav²,Nemšák Slavomír¹^ORCID,Nagler Philipp³,Gospodarič Pika¹,Zamborlini Giovanni¹,Eschbach Markus¹,Feyer Vitaliy¹,Kronast Florian⁴,Młyńczak Ewa¹⁵,Korn Tobias³,Plucinski Lukasz¹,Schüller Christian³,Blügel Stefan²,Schneider Claus M.¹

Affiliation:

1. Peter Grünberg Institut PGI-6, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

2. Peter Grünberg Institut PGI-1 and Institute for Advanced Simulation IAS-1, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

3. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93053 Regensburg, Germany

4. Abteilung Materialien für grüne Spintronik, Helmholtz-Zentrum Berlin, 14109 Berlin, Germany

5. Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Kraków, Poland

Funder

Helmholtz-Gemeinschaft

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b00627

Reference45 articles.

1. Two-dimensional van der Waals materials

2. Are we van der Waals ready?

3. Van der Waals heterostructures

4. Emerging Photoluminescence in Monolayer MoS2

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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