Single-Layered Hittorf’s Phosphorus: A Wide-Bandgap High Mobility 2D Material-Reference-Cited by-同舟云学术

Single-Layered Hittorf’s Phosphorus: A Wide-Bandgap High Mobility 2D Material

Published:2016-04-25 Issue:5 Volume:16 Page:2975-2980
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Schusteritsch Georg¹²,Uhrin Martin¹³,Pickard Chris J.¹²⁴

Affiliation:

1. Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

3. Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

4. Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan

Funder

Engineering and Physical Sciences Research Council

Royal Society

Wolfson Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b05068

Reference42 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

3. Graphene transistors

4. Single-layer MoS2 transistors

5. High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

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