Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy-Reference-Cited by-同舟云学术

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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Published:2015-09-23 Issue:10 Volume:15 Page:6770-6776
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Minj A.¹,Cros A.¹,Garro N.¹,Colchero J.²,Auzelle T.³⁴,Daudin B.³⁴

Affiliation:

1. Materials Science Institute, University of Valencia, P.O. Box 22085, E46071 Valencia, Spain

2. Facultad de Química, Departamento de Física, Universidad de Murcia, 30100 Murcia, Spain

3. Université Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France

4. CEA, INAC-SP2M, F-38054 Grenoble, France

Funder

Ministerio de Ciencia e Innovación

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02607

Reference41 articles.

1. Growth and characterization of N-polar InGaN∕GaN multiquantum wells

2. Development of periodically oriented gallium nitride for non-linear optics [Invited]

3. Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

4. Impact of the GaN nanowire polarity on energy harvesting

5. Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

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