Topological Winding Number Change and Broken Inversion Symmetry in a Hofstadter’s Butterfly
Author:
Affiliation:
1. Department of Physics and Astronomy, University of California, Riverside, California 92521, United States
2. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Funder
Advanced Research Projects Agency - Energy
Center of Nano-scale Electronics, Phenomena, and Technology, University of California, Riverside
Division of Materials Research
Office of Naval Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01568
Reference35 articles.
1. Boron nitride substrates for high-quality graphene electronics
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5. Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
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