An Atomically Layered InSe Avalanche Photodetector-Reference-Cited by-同舟云学术

An Atomically Layered InSe Avalanche Photodetector

Published:2015-04-06 Issue:5 Volume:15 Page:3048-3055
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lei Sidong¹,Wen Fangfang²³,Ge Liehui¹,Najmaei Sina¹,George Antony¹,Gong Yongji¹,Gao Weilu⁴,Jin Zehua¹,Li Bo¹,Lou Jun¹,Kono Junichiro¹⁵⁴,Vajtai Robert¹,Ajayan Pulickel¹²,Halas Naomi J.²³⁵⁴

Affiliation:

1. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States

2. Department of Chemistry, Rice University, Houston, Texas 77005, United States

3. Laboratory for Nanophotonics, Rice University, Houston, Texas 77005, United States

4. Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States

5. Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States

Funder

Welch Foundation

Defense Advanced Research Projects Agency

Directorate for Engineering

Army Research Office

Microelectronics Advanced Research Corporation

Office of Naval Research

U.S. Department of Defense

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00016

Reference32 articles.

1. Flat transistors get off the ground

2. Black phosphorus field-effect transistors

3. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

4. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

5. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

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