Phonon Engineering in Isotopically Disordered Silicon Nanowires-Reference-Cited by-同舟云学术

Phonon Engineering in Isotopically Disordered Silicon Nanowires

Published:2015-05-29 Issue:6 Volume:15 Page:3885-3893
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mukherjee S.¹,Givan U.²,Senz S.²,Bergeron A.¹,Francoeur S.¹,de la Mata M.³⁴,Arbiol J.³⁵⁴,Sekiguchi T.⁶,Itoh K. M.⁶,Isheim D.⁷,Seidman D. N.⁷,Moutanabbir O.¹

Affiliation:

1. Department of Engineering Physics, Polytechnique Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada

2. Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle (Saale), Germany

3. Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Catalonia Spain

4. Institut Català de Nanociència i Nanotecnologia, ICN2, Campus UAB, 08193 Bellaterra, Catalonia, Spain

5. Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia Spain

6. Department of Applied Physics and Physico-Informatics, Keio University, Hiyoshi, Yokohama, Japan

7. Department of Materials Science and Engineering Northwestern University Center for Atom-Probe Tomography, Northwestern University, Evanston, Illinois 60208-3108, United States

Funder

Natural Sciences and Engineering Research Council of Canada

Canada Research Chairs

Generalitat de Catalunya

Consejo Superior de Investigaciones Cient?ficas

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00708

Reference32 articles.