High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit-Reference-Cited by-同舟云学术

High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Published:2015-10-07 Issue:11 Volume:15 Page:7288-7293
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shiue Ren-Jye¹,Gao Yuanda²,Wang Yifei¹,Peng Cheng¹,Robertson Alexander D.²,Efetov Dmitri K.¹,Assefa Solomon³,Koppens Frank H. L.⁴,Hone James²,Englund Dirk¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States

4. ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain

Funder

Basic Energy Sciences

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02368

Reference47 articles.

1. Towards fabless silicon photonics

2. Device Requirements for Optical Interconnects to Silicon Chips

3. Photonic Network-on-Chip Design

4. Integrated optical devices for lab-on-a-chip biosensing applications

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