Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering-Reference-Cited by-同舟云学术

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Published:2015-11-23 Issue:12 Volume:15 Page:8245-8249
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Koirala Nikesh,Brahlek Matthew,Salehi Maryam,Wu Liang¹,Dai Jixia,Waugh Justin²,Nummy Thomas²,Han Myung-Geun³,Moon Jisoo,Zhu Yimei³,Dessau Daniel²,Wu Weida,Armitage N. Peter¹,Oh Seongshik

Affiliation:

1. Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, United States

2. Department of Physics, University of Colorado, Boulder, Colorado 80309, United States

3. Condensed Matter Physics and Materials Science, Brookhaven National Lab, Upton, New York 11973, United States

Funder

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03770

Reference30 articles.

1. Colloquium: Topological insulators

2. Emergence of Decoupled Surface Transport Channels in Bulk InsulatingBi2Se3Thin Films

3. Spin-transfer torque generated by a topological insulator

4. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

5. Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

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