Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS2-Reference-Cited by-同舟云学术

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Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS2

Published:2015-11-12 Issue:12 Volume:15 Page:8250-8254
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yang Luyi¹,Chen Weibing²,McCreary Kathleen M.³,Jonker Berend T.³,Lou Jun²,Crooker Scott A.¹

Affiliation:

1. National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, United States

2. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States

3. Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States

Funder

Laboratory Directed Research and Development

Institute for Nanoscience, U. S. Naval Research laboratory

Welch Foundation

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03771

Reference31 articles.

1. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

2. Control of valley polarization in monolayer MoS2 by optical helicity

3. Valley polarization in MoS2 monolayers by optical pumping

4. Robust optical emission polarization in MoS2monolayers through selective valley excitation

5. Spin and pseudospins in layered transition metal dichalcogenides

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