Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures-Reference-Cited by-同舟云学术

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Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures

Published:2015-10-08 Issue:11 Volume:15 Page:7514-7518
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Brunbauer Florian M.¹,Bertagnolli Emmerich¹,Lugstein Alois¹

Affiliation:

1. Institute for Solid State Electronics, Technische Universität Wien, Floragasse 7, 1040 Vienna, Austria

Funder

Austrian Science Fund

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03169

Reference32 articles.

1. Tunnel field-effect transistor using InAs nanowire/Si heterojunction

2. VLS-grown silicon nanowire tunnel FET

3. Single-electron transistors in heterostructure nanowires

4. Negative Differential Resistance in GaN/AlN Heterostructure Nanowires

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1. Electronic Transport and Quantum Phenomena in Nanowires;Chemical Reviews;2024-02-23

2. MoTe₂/SnSe₂ Tunneling Diode Regulated by Giant Ferroelectric Field;IEEE Transactions on Electron Devices;2023-11

3. Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDR;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

4. Evolution of Electrical Transport Property in Ge‐Based Negative Differential Resistance Devices under Pulsed High Magnetic Field;physica status solidi (RRL) – Rapid Research Letters;2022-07

5. Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime;ACS Photonics;2021-11-29

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