Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence-Reference-Cited by-同舟云学术

Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence

Published:2023-03-09 Issue:6 Volume:23 Page:2087-2093
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Eremchev Ivan Yu.¹²^ORCID,Tarasevich Aleksandr O.¹²³^ORCID,Kniazeva Maria A.¹²³^ORCID,Li Jun⁴^ORCID,Naumov Andrei V.¹²^ORCID,Scheblykin Ivan G.⁴^ORCID

Affiliation:

1. Institute of Spectroscopy RAS, Troitsk, Moscow 108840, Russia

2. Lebedev Physical Institute of the Russian Academy of Sciences, Troitsk, Moscow 108840, Russia

3. National Research University Higher School of Economics, Moscow 109028, Russia

4. Chemical Physics and Nano Lund, Lund University, Box 124, SE-22100 Lund, Sweden

Funder

Vetenskapsrådet

Russian Science Foundation

Knut och Alice Wallenbergs Stiftelse

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04004

Reference45 articles.

1. Photon Antibunching and Squeezing for a Single Atom in a Resonant Cavity

2. Photon Antibunching in Resonance Fluorescence

3. Photon antibunching in the fluorescence of a single dye molecule trapped in a solid

4. Fluorescence photon antibunching from single molecules on a surface

5. Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots

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