Spontaneous Valley Polarization Caused by Crystalline Symmetry Breaking in Nonmagnetic LaOMX2 Monolayers
Author:
Affiliation:
1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, People’s Republic of China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c03791
Reference38 articles.
1. Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field
2. Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
3. Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory
4. Bandgap Engineering of Strained Monolayer and Bilayer MoS2
5. Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
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