Realization of Ultra-Scaled MoS<sub>2</sub> Vertical Diodes via Double-Side Electrodes Lamination-Reference-Cited by-同舟云学术

Realization of Ultra-Scaled MoS₂ Vertical Diodes via Double-Side Electrodes Lamination

Published:2022-05-26 Issue:11 Volume:22 Page:4429-4436
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Wanying¹,Liu Liting¹,Tao Quanyang¹,Chen Yang¹,Lu Zheyi¹,Kong Lingan¹,Dang Weiqi²,Zhang Wujun³,Li Zhiwei¹,Li Qianyuan¹,Tang Jie¹,Ren Liwang¹,Song Wenjing¹,Duan Xidong²^ORCID,Ma Chao³^ORCID,Xiang Yuanjiang¹^ORCID,Liao Lei¹^ORCID,Liu Yuan¹^ORCID

Affiliation:

1. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China

2. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

3. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c00922

Reference39 articles.

1. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

2. Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits