Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy-Reference-Cited by-同舟云学术

Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy

Published:2022-09-15 Issue:18 Volume:22 Page:7636-7643
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Zhangfu¹,Hoang Anh Tuan²^ORCID,Hwang Woohyun¹,Seo Dongjea³,Cho Minhyun⁴,Kim Young Duck⁴^ORCID,Yang Lianqiao⁵,Soon Aloysius¹^ORCID,Ahn Jong-Hyun²^ORCID,Choi Heon-Jin¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea

3. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States

4. Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea

5. Key Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China

Funder

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education

Korean Institute of Science and Technology Information (KISTI) supercomputing center through the strategic support program for supercomputing application research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c02763

Reference51 articles.

1. γ-GeSe: A New Hexagonal Polymorph from Group IV–VI Monochalcogenides

2. Few-Layer to Multilayer Germanium(II) Sulfide: Synthesis, Structure, Stability, and Optoelectronics

3. Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure

4. Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

5. Vacancies and oxidation of two-dimensional group-IV monochalcogenides

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