Robust Quantum Anomalous Hall States in Monolayer and Few-Layer TiTe-Reference-Cited by-同舟云学术

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Robust Quantum Anomalous Hall States in Monolayer and Few-Layer TiTe

Published:2022-07-01 Issue:13 Volume:22 Page:5379-5384
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xuan Xiaoyu¹,Zhang Zhuhua¹^ORCID,Chen Changfeng²,Guo Wanlin¹

Affiliation:

1. State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China

2. Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c01421

Reference42 articles.

1. Topological Insulator Materials

2. Colloquium: Topological insulators

3. Two-dimensional functional materials: from properties to potential applications

4. Tailoring geometric phases of two-dimensional functional materials under light: a brief review

5. The birth of topological insulators

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4. Monolayer V2MX4 : A New Family of Quantum Anomalous Hall Insulators;Physical Review Letters;2024-03-07

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