Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform-Reference-Cited by-同舟云学术

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Published:2023-02-07 Issue:4 Volume:23 Page:1261-1266
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jin Ik Kyeong¹^ORCID,Kumar Krittika¹,Rendell Matthew J.¹,Huang Jonathan Yue²³^ORCID,Escott Chris C.²³,Hudson Fay E.²³,Lim Wee Han²³,Dzurak Andrew S.²³^ORCID,Hamilton Alexander R.¹,Liles Scott D.¹^ORCID

Affiliation:

1. School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia

2. School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales 2052, Australia

3. Diraq, Sydney, New South Wales 2052, Australia

Funder

Army Research Office

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04417

Reference38 articles.

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5. A germanium hole spin qubit

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1. A singlet-triplet hole-spin qubit in MOS silicon;Nature Communications;2024-09-03

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3. Electrical operation of hole spin qubits in planar MOS silicon quantum dots;Physical Review B;2024-02-22

4. Nanowire-Based Si-CMOS Devices;Springer Tracts in Electrical and Electronics Engineering;2024