Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon-Reference-Cited by-同舟云学术

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Published:2021-04-05 Issue:7 Volume:21 Page:3139-3145
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dubrovskii Vladimir G.¹^ORCID,Kim Wonjong²,Piazza Valerio²,Güniat Lucas²^ORCID,Fontcuberta i Morral Anna²³^ORCID

Affiliation:

1. Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia

2. Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

3. Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Russian Science Foundation

Piaget

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c00349

Reference37 articles.

1. Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

2. Nucleation Antibunching in Catalyst-Assisted Nanowire Growth

3. Self-assembled quantum dots in a nanowire system for quantum photonics

4. Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

5. Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

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