Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well-Reference-Cited by-同舟云学术

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Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well

Published:2021-09-12 Issue:18 Volume:21 Page:7527-7533
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Niu Chang¹²^ORCID,Qiu Gang¹²,Wang Yixiu³,Si Mengwei¹²^ORCID,Wu Wenzhuo³^ORCID,Ye Peide D.¹²^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States

3. School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Army Research Office

Air Force Office of Scientific Research

Semiconductor Research Corporation

Division of Civil, Mechanical and Manufacturing Innovation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c01705

Reference34 articles.

1. Quantum Hall Effects

2. Correlated states of an electron system in a wide quantum well

3. Pairing states of composite fermions in double-layer graphene

4. Observation of a ν=1/2 fractional quantum Hall state in a double-layer electron system

5. Many-body integer quantum Hall effect: Evidence for new phase transitions

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