Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale-Reference-Cited by-同舟云学术

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Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale

Published:2021-11-04 Issue:22 Volume:21 Page:9560-9566
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Schultheiß Jan¹^ORCID,Lysne Erik¹,Puntigam Lukas²,Schaab Jakob³,Bourret Edith⁴,Yan Zewu⁴⁵,Krohns Stephan²,Meier Dennis¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7034, Trondheim, Norway

2. Experimental Physics V, University of Augsburg, 86159, Augsburg, Germany

3. Department of Materials, ETH Zurich, 8093, Zurich, Switzerland

4. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

5. Department of Physics, ETH Zurich, 8093, Zurich, Switzerland

Funder

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c03182

Reference50 articles.

1. Domain wall nanoelectronics

2. Functional domain walls in multiferroics

3. Publisher Correction: Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

4. The electronic properties of bilayer graphene

5. Single-Layer MoS2 Electronics

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1. Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions;Matter;2024-09

2. In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film;Nature Communications;2023-12-09

3. Pressure Control of Nonferroelastic Ferroelectric Domains in ErMnO₃;Nano Letters;2023-07-20

4. Ferroelectric polycrystals: Structural and microstructural levers for property-engineering via domain-wall dynamics;Progress in Materials Science;2023-07

5. Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film;IEEE Electron Device Letters;2023-01

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