Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2–MoSe2 Interface-Reference-Cited by-同舟云学术

Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2–MoSe2 Interface

Published:2021-08-19 Issue:17 Volume:21 Page:7123-7130
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kumar Abhijeet¹^ORCID,Yagodkin Denis¹,Stetzuhn Nele¹,Kovalchuk Sviatoslav¹^ORCID,Melnikov Alexey²,Elliott Peter³,Sharma Sangeeta³,Gahl Cornelius¹^ORCID,Bolotin Kirill I.¹

Affiliation:

1. Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany

2. Institute for Physics, Martin Luther University Halle, 06120 Halle, Germany

3. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born Straße 2a, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c01538

Reference56 articles.

1. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

2. Spin and pseudospins in layered transition metal dichalcogenides

3. Control of valley polarization in monolayer MoS2 by optical helicity

4. Valley-selective circular dichroism of monolayer molybdenum disulphide

5. The valley Hall effect in MoS 2 transistors

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