Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride Using Time-Resolved Optically Detected Magnetic Resonance-Reference-Cited by-同舟云学术

Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride Using Time-Resolved Optically Detected Magnetic Resonance

Published:2021-12-27 Issue:1 Volume:22 Page:461-467
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Baber Simon¹,Malein Ralph Nicholas Edward¹^ORCID,Khatri Prince¹^ORCID,Keatley Paul Steven¹^ORCID,Guo Shi¹,Withers Freddie¹,Ramsay Andrew J.²^ORCID,Luxmoore Isaac J.¹^ORCID

Affiliation:

1. College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom

2. Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c04366

Reference37 articles.

1. Single-photon emitters in hexagonal boron nitride: a review of progress

2. Quantum emission from hexagonal boron nitride monolayers

3. Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

4. Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

5. Mechanical decoupling of quantum emitters in hexagonal boron nitride from low-energy phonon modes

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