Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet-Reference-Cited by-同舟云学术

Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet

Published:2023-12-08 Issue:24 Volume:23 Page:11485-11492
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Fang Chi¹²^ORCID,Wan Caihua¹³,Zhang Xiaoyue⁴⁵,Okamoto Satoshi⁶^ORCID,Ma Tianyi¹⁴^ORCID,Qin Jianying¹⁴,Wang Xiao¹,Guo Chenyang¹,Dong Jing¹,Yu Guoqiang¹³^ORCID,Wen Zhenchao⁷,Tang Ning⁵^ORCID,Parkin Stuart S. P.²^ORCID,Nagaosa Naoto⁸,Lu Yuan⁴^ORCID,Han Xiufeng¹³⁹^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

2. Max Planck Institute of Microstructure Physics, Halle (Saale) 06120, Germany

3. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

4. Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM, 2 Allée André Guinier, 54011 Nancy, France

5. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

6. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

7. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan

8. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

9. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Agence Nationale de la Recherche

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03085

Reference53 articles.

1. Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

2. Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

3. Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures

4. Programmable Spin Logic Based on Spin Hall Effect in a Single Device

5. Field-Free Programmable Spin Logics via Chirality-Reversible Spin-Orbit Torque Switching