Gate-Tunable Multiband Transport in ZrTe5 Thin Devices

Author:

Liu Yonghe12,Pi Hanqi12,Watanabe Kenji3ORCID,Taniguchi Takashi4ORCID,Gu Genda5,Li Qiang56,Weng Hongming12ORCID,Wu Quansheng12,Li Yongqing12ORCID,Xu Yang12ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

3. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

5. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States

6. Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, United States

Funder

Ministry of Education, Culture, Sports, Science and Technology

National Key Research and Development Program of China

Basic Energy Sciences

Core Research for Evolutional Science and Technology

National Natural Science Foundation of China

Chinese Academy of Sciences

Innovation Program for Quantum Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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