Large-Area Epitaxial Mott Insulating 1T-TaSe<sub>2</sub> Monolayer on GaP(111)B-Reference-Cited by-同舟云学术

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Large-Area Epitaxial Mott Insulating 1T-TaSe₂ Monolayer on GaP(111)B

Published:2023-10-11 Issue:20 Volume:23 Page:9413-9419
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Koussir H.¹,Chernukha Y.¹,Sthioul C.¹,Haber E.¹,Peric N.¹,Biadala L.¹^ORCID,Capiod P.¹,Berthe M.¹,Lefebvre I.¹,Wallart X.¹,Grandidier B.¹^ORCID,Diener P.¹^ORCID

Affiliation:

1. Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France

Funder

Agence Nationale de la Recherche

Région Hauts-de-France

I-SITE ULNE

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02813

Reference41 articles.

1. Doping a Mott insulator: Physics of high-temperature superconductivity

2. Superconductivity in an infinite-layer nickelate

3. Spin-glass transition in the spin–orbit-entangled Jeff = 0 Mott insulating double-perovskite ruthenate

4. An Emergent Change of Phase for Electronics

5. Towards properties on demand in quantum materials

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