Two-Dimensional Artificial Ge Superlattice Confining in Electronic Kagome Lattice Potential Valleys-Reference-Cited by-同舟云学术

Two-Dimensional Artificial Ge Superlattice Confining in Electronic Kagome Lattice Potential Valleys

Published:2023-10-23 Issue:21 Volume:23 Page:9851-9857
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tian Qiwei¹,Izadi Vishkayi Sahar²^ORCID,Bagheri Tagani Meysam³^ORCID,Zhang Li¹,Tian Yuan¹,Yin Long-Jing¹^ORCID,Zhang Lijie¹^ORCID,Qin Zhihui¹^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China

2. School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran

3. Department of Physics, University of Guilan, P.O. Box 41335-1914, Rasht 32504550, Iran

Funder

Natural Science Foundation of Hunan Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02674

Reference54 articles.

1. Onset of Catalytic Activity of Gold Clusters on Titania with the Appearance of Nonmetallic Properties

2. Electronically Induced Atom Motion in Engineered CoCu n Nanostructures

3. Quantum computers

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5. Designer Dirac fermions and topological phases in molecular graphene

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