Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering

Author:

Shao Minghao1ORCID,Liu Houfang1,He Ri2ORCID,Li Xiaomei3,Wu Liang45ORCID,Ma Ji5ORCID,Ye Chen4,Hu Xiangchen6,Zhao Ruiting1,Zhong Zhicheng2ORCID,Yu Yi6ORCID,Wan Caihua7,Yang Yi1,Nan Ce-Wen8,Bai Xuedong7ORCID,Ren Tian-Ling1ORCID,Renshaw Wang X.49ORCID

Affiliation:

1. Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

2. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

3. School of Integrated Circuits, East China Normal University, Shanghai 200241, China

4. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371

5. Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China

6. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

7. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

8. School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China

9. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

Funder

National Key Research and Development Program of China

Agency for Science, Technology and Research

Ministry of Education - Singapore

National Research Foundation Singapore

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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