Layer Hall Effect in Multiferroic Two-Dimensional Materials-Reference-Cited by-同舟云学术

Layer Hall Effect in Multiferroic Two-Dimensional Materials

Published:2023-05-26 Issue:11 Volume:23 Page:5367-5372
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Feng Yangyang¹,Dai Ying¹^ORCID,Huang Baibiao¹^ORCID,Kou Liangzhi²^ORCID,Ma Yandong¹^ORCID

Affiliation:

1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China

2. School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Garden Point Campus, Brisbane, Queensland 4001, Australia

Funder

Taishan Scholar Project of Shandong Province

Major Scientific and Technological Innovation Project of Shandong Province

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Qingchuang Talents Induction Program of Shandong Higher Education Institution

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c01651

Reference44 articles.

1. Experimental measurement of the Berry curvature from anomalous transport

2. Berry phase effects on electronic properties

3. Berry curvature memory through electrically driven stacking transitions

4. Anomalous Hall effect

5. Prediction and observation of an antiferromagnetic topological insulator

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