Controlling the Charge Density Wave Transition in Single-Layer TiTe2xSe2(1–x) Alloys by Band Gap Engineering-Reference-Cited by-同舟云学术

Controlling the Charge Density Wave Transition in Single-Layer TiTe_2xSe_2(1–x) Alloys by Band Gap Engineering

Published:2023-12-20 Issue:1 Volume:24 Page:215-221
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Antonelli Tommaso¹,Rajan Akhil¹^ORCID,Watson Matthew D.¹,Soltani Shoresh¹^ORCID,Houghton Joe¹,Siemann Gesa-Roxanne¹^ORCID,Zivanovic Andela¹,Bigi Chiara¹^ORCID,Edwards Brendan¹^ORCID,King Phil D. C.¹^ORCID

Affiliation:

1. SUPA, School of Physics and AstronomyUniversity of St Andrews, St Andrews KY16 9SS, United Kingdom

Funder

Royal Society

Engineering and Physical Sciences Research Council

Leverhulme Trust

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03776

Reference29 articles.

1. Momentum microscopy of the layered semiconductor TiS2and Ni intercalated Ni1/3TiS2

2. Orbital- and kz -Selective Hybridization of Se 4p and Ti 3d States in the Charge Density Wave Phase of TiSe2

3. Electronic properties and superlattice formation in the semimetalTiSe2

4. Charge density wave transition in single-layer titanium diselenide

5. Strong-coupling charge density wave in monolayer TiSe2

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