Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices-Reference-Cited by-同舟云学术

Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices

Published:2024-02-02 Issue:6 Volume:24 Page:2003-2010
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang Wenli¹,Liu Jiaqiang¹,Su Wei¹,Han Yongliang¹,Du Qin¹,Wu Jingen¹,Hu Zhongqiang¹^ORCID,Wang Chenying¹,Jiang Zhuangde¹,Wang Zhiguang¹,Liu Ming¹^ORCID

Affiliation:

1. State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Engineering Research Center of Spin Quantum Sensor Chips, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Funder

National Key Research and Development Program of China

Key Science and Technology Program of Shaanxi Province

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c04535

Reference57 articles.

1. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

2. A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration

3. Manipulating exchange bias by spin–orbit torque

4. Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

5. Magnetoresistive Random Access Memory: Present and Future

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