Fabrication of Ion-Implanted Si Nanowire p-FETs-Reference-Cited by-同舟云学术

Fabrication of Ion-Implanted Si Nanowire p-FETs

Published:2008-08-05 Issue:34 Volume:112 Page:13287-13291
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lee Seung-Yong¹,Jang Chan-Oh¹,Kim Dong-Joo¹,Hyung Jung-Hwan¹,Rogdakis Konstantinos¹,Bano Edwige¹,Zekentes Konstantinos¹,Lee Sang-Kwon¹

Affiliation:

1. Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea, MRG, IESL, Foundation for Research and Technology-Hellas, Vassilika Vouton, P.O. Box 1527, 71110 Heraklion, Crete, Greece, and IMEP/INP Grenoble, MINATEC, 3, parvis Louis Neel-BP 257, 38016 Grenoble Cedex 01, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp804059g

Reference16 articles.

1. High Performance Silicon Nanowire Field Effect Transistors

2. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

3. ZnO Nanowire Transistors

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

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