Deposition of Thin Films of Gallium Sulfide from a Novel Single-Source Precursor, Ga(S2CNMeHex)3, by Low-Pressure Metal−Organic Chemical Vapor Deposition
Author:
Affiliation:
1. Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2AY, United Kingdom
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm9905040
Reference19 articles.
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2. Preparation of CuInS2 thin films by single-source MOCVD process using Bu2In(SPr)Cu(S2CNPri 2)
3. Cao, X. A.; Hu, J. T.; Ding, X. M.; Yuan, Z. L.; Dong, Y.; Chen, X. Y.; Lai, B.; Hou, X. Y.J. Vac. Sci. Technol.1998,B 16, 2656.
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