Dissociation and Multiply Charged Silicon Ejection in High Abundance from Hexamethyldisilane-Reference-Cited by-同舟云学术

Dissociation and Multiply Charged Silicon Ejection in High Abundance from Hexamethyldisilane

Published:2010-10-19 Issue:44 Volume:114 Page:11890-11895
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Yatsuhashi Tomoyuki¹,Nakashima Nobuaki¹

Affiliation:

1. Department of Chemistry, Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 Japan, and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama, 332-0012 Japan

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp1067186

Reference40 articles.

1. Chemical vapour deposition of coatings

2. Film Deposition by Plasma Techniques

3. Production of Si+ and Cl+ ion beams from a Freeman type ion source using low toxicity and non-corrosive vapours as source gas

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