High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors-Reference-Cited by-同舟云学术

High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors

Published:2009-03-20 Issue:4 Volume:9 Page:1374-1377
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tang Y. B.¹,Lee C. S.¹,Chen Z. H.¹,Yuan G. D.¹,Kang Z. H.¹,Luo L. B.¹,Song H. S.¹,Liu Y.¹,He Z. B.¹,Zhang W. J.¹,Bello I.¹,Lee S. T.¹

Affiliation:

1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China, and Functional Nano & Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl803025e

Reference33 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

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