A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes-Reference-Cited by-同舟云学术

A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

Published:2024-07-01 Issue:7 Volume:9 Page:3567-3577
ISSN:2380-8195
Container-title:ACS Energy Letters
language:en
Short-container-title:ACS Energy Lett.

Author:

Zapata-Arteaga Osnat¹^ORCID,Perevedentsev Aleksandr¹²,Prete Michela¹²,Busato Stephan³,Floris Paolo Sebastiano¹,Asatryan Jesika⁴,Rurali Riccardo¹^ORCID,Martín Jaime⁴,Campoy-Quiles Mariano¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain

2. Molecular Gate SL, calle Genova 11, 28004 Madrid, Spain

3. Department of Materials, Eidgenössische Technische Hochschule (ETH) Zürich, Vladimir-Prelog-Weg 5, Zürich 8093, Switzerland

4. Universidade da Coruña, Campus Industrial de Ferrol, CITENI, Esteiro, 15403 Ferrol, Spain

Funder

Ministerio de Ciencia e Innovaci?n

Ag?ncia de Gesti? d'Ajuts Universitaris i de Recerca

H2020 Marie Sklodowska-Curie Actions

Universitat Aut?noma de Barcelona

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsenergylett.4c01278

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