Stability of the Surface Electron Accumulation Layers on the Nonpolar (101̅0) and (112̅0) Faces of ZnO
Author:
Affiliation:
1. The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8043, New Zealand
2. Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
Funder
Royal Society of New Zealand
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp507820m
Reference43 articles.
1. The chemistry and physics of zinc oxide surfaces
2. ZnO Devices and Applications: A Review of Current Status and Future Prospects
3. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review
4. Analysis of a conducting channel at the native zinc oxide surface
5. Metallization ofZnO(101¯0)by adsorption of hydrogen, methanol, and water: Angle-resolved photoelectron spectroscopy
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